samwin SW50N06 rev2.1 05.07.21 features n-channel mosfet bv dss (minimum) r ds(on) (maximum) i d qg(typical) p d (@tc=25 ) general description this power mosfet is produced in chmc with advanced vdmos process, planarstripe. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. absolute maximum ratings symbol parameter valueunits v dss drain to source voltage 60 v continuous drain current (@tc=25 )50 a continuous drain current (@tc=100 )35 a i dm drain current pulsed (note 1)200 a v gs gate to source voltage 20 v e as single pulsed avalanche energy (note 2)480 mj e ar repetitive avalanche energy (note 1)13 mj dv/dtpeak diode recovery dv/dt (note 3) 7 v/ns total power dissipation (@tc=25 ) 130 w derating factor above 25 0.9 w/ t stg ,t j operating junction temperature &storage temperature -55~+150 t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 p d i d thermal characteristics / w 62.5 - - thermal resistance, junction-to-ambient r ja / w - 0.5 - thermal resistance, case-to-sink r cs / w 1.15 - - thermal resistance, junction-to-case r jc max typ min units value parameter symbol 1/6 : 60v : 0.023ohm : 50 a : 30nc : 130w g s d
samwin SW50N06 rev2.1 05.07.21 2/6 electrical characteristics (tc=25 unless otherwise noted) value symbol parameter test conditions mintypmax off characteristics bv dss drain-source breakdown voltagev gs =0v,i d =250ua 60--v bv dss / tj breakdown voltage temperature coefficient i d =250ua,referenced to 25 -0.07-v/ v ds =60v, v gs =0v i dss drain-source leakage current v ds =48v, tc=125 --1ua gate-source leakage current v gs =20v,v ds =0v --100na gate-source leakage reverse v gs =-20v, v ds =0v ---100na on characteristics v gs (th)gate threshold voltage v ds =v gs ,i d =250ua 2.0-4.0v r ds(on) static drain-source on-state resistance v gs =10v,i d =25a -0.0180.023ohm dynamic characteristics cissinput capacitance -9001220 cossoutput capacitance -430550 crssreverse transfer capacitance -80100 dynamic characteristics t d(on) turn-on delay time -4060 t r rise time -100200 t d(off) turn-off delay time -90180 t f fall time -80160 q g total gate charge -3040 q gs gate-source charge -9.6- q gd gate-drain charge (miller charge) -10- nc v ds =48v,v gs =10v, i d =50a (note4,5) ns v dd =30v,i d =25a r g =50ohm (note4,5) pf v gs =0v,v ds =25v, f=1mhz i gss units source-drain diode ratings and characteristics uc - 81 - reverse recovery charge q rr ns - 54 - i s =50a,v gs =0v, di f /dt=100a/us reverse recovery time t rr v 1.5 - - i s =50a,v gs =0v diode forward voltage v sd 200 - - pulsed source current i sm a 50 - - integral reverse p-n junction diode in the mosfet continuous source current i s unit. max. typ. min. test conditions parameter symbol notes 1. repeativity rating: pulse width limited by junction temperature 2. l=5.6mh,i as =50a,v dd =25v,rg=0ohm, starting tj=25 3. i sd 50a,di/dt 300a/us,v dd bv dss , starting tj=25 4. pulse test: pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature.
samwin SW50N06 rev2.1 05.07.21 3/6 fig 1. on-state characteristics fig 3. on resistance variation vs. drain current and gate voltage fig 4. on state current vs. allowable case temperature fig 2. transfer characteristics fig 6. gatecharge characteristics fig 5. capacitance characteristics (non-repetitive) 150 25 2345678910 10 0 10 1 10 2 25 o c v gs , gate-source voltage [v] i d , d r a i n c u r r e n t [ a ] 150 o c note: 1.v ds =50v 2.250us pulse test. 10 -1 10 0 10 1 10 0 10 1 10 2 4.5v v gs top: 15v 10v 8v 7v 6v 5.5v 5v bottom:4.5v i d , d r a i n c u r r e n t [ a ] v ds ,drain-to-source voltage [v] 020406080100120140160180200 0 10 20 30 40 50 60 70 v gs =10v v gs =20v r d s ( o n ) d r a i n - s o u r c e o n - r e s i s t a n c e [ m o h m ] i d , drain current [a] 0.20.40.60.81.01.21.41.6 10 0 10 1 10 2 note: 1.v gs =0v 2.250us test i s d , r e v e r s e d r a i n c u r r e n t [ a ] v sd ,source-drain voltage[v] 5101520253035 0 500 1000 1500 2000 2500 3000 note: 1.v gs =0v 2.f=1mhz. c rss c iss c oss c a p a c i t a n c e [ p f ] v dc ,drain-source voltage [v] ciss = cgs+cgd(cds=shorted) coss= cds+cgd crss = cgd 051015202530354045 0 2 4 6 8 10 12 v ds =30v v ds =48v v g s , g a t e - t o - s o u r c e v o l t a g e [ v ] q g ,total gate charge [nc] note:i d =50a
samwin SW50N06 rev2.1 05.07.21 4/6 fig 7. breakdown voltage variation vs. junction temperature fig 8. on-resistance variation vs. junction temperature fig 11. transient thermal response curve fig 10. maximum drain current vs. case temperature fig9. maximum safe operating -100-50050100150200 0.8 0.9 1.0 1.1 1.2 note: 1.v gs =0v 2.i d =250u a b v d s s [ n o r m a l i z e d ] d r a i n - s o u r c e b r e a k d o w n v o l t a g e t j ,junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 d=0.5 0.2 0.1 0.01 0.02 0.05 note: 1.z jc (t)=1.42 o c/w max 2.duty factor,d=t1/t2 3.tj-tc=p dm * z jc (t) single pulse z j c ( t ) , t h e r m a l r e s p o n s e t 1 ,square wave pulse duration (sec) -50050100150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 note: 1.v gs =10v 2.i d =25a r d s ( o n ) ( n o r m a l i z e d ) d r a i n - s o u r c e o n - r e s i s t a n c e t j ,junction temperature[ o c] 255075100125150 0 10 20 30 40 50 i d , d r a i n c u r r e n t [ a ] t c ,case temperature [ o c] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 i d , d r a i n c u r r e n t [ a ] v d ,drain-source voltage[v] operation in this area limted by r ds(on) dc 10ms 1ms 100us note: 1.tc=25 c 2.tj=150 c 3.single pulse
samwin SW50N06 rev2.1 05.07.21 5/6 time v ds (t) q gd q gs v gs 10v charge q g dut 1ma same type as dut 200nf 50k 300nf v gs v ds fig 12. gate charge test circuit & waveforms fig 14. unclamped inductive switchingtest circuit & waveforms fig 13.switching test circuit & waveforms v dd (0.5 rated v ds ) v ds v in 90% 10% t d(on) t r t on t d(off) t f t off v ds 10v r g dut r l pulse generator v dd t p v ds l r g dut 10v bv dss i as i d (t) v dd eas= ---l l i as 2 --------------- bv dss bv dss -v dd 1 2
samwin SW50N06 rev2.1 05.07.21 6/6 fig 15. peak diode recovery dv/dttest circuit & waveforms v dd dut v ds + __ driver l same type as dut r g is controlled by pulse period v gs v gs (driver) i s (dut) v ds (dut) i fm ,body diode forward current i rm di/dt body diode reverse current body diode recovery dv/dt v f body diode forward voltage drop gate pulse width gate pulse period d = --------------------------- 10v v dd
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